In situ growth of Sb2S3 thin films by reactive sputtering on n-Si(100) substrates for top sub-cell of silicon based tandem solar cells

Chunhui Gao, Ming Xu, Boon K. Ng, Liangliang Kang, Liangxing Jiang, Yanqing Lai, Fangyang Liu

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Si-based tandem solar cells have emerged as a promising alternative to replace the current high efficiency silicon single junction solar cells. Sb2S3 is a promising candidates for top cell absorbers due to its suitable band gap, non-toxic and earth-abundant constituent, simple composition, and long term stability. Here, in situ growth of Sb2S3 thin films by radio frequency (RF) reactive sputtering on n-Si(100) substrates is reported. The effects of the growth temperature on morphology, structure, optical and electrical properties of the films were evaluated. The top sub-cell device shows an open circuit voltage (Voc) of 367 mV, indicating the potential to be the top cell of the next generation Si-based tandem solar cells.
Original languageEnglish
Pages (from-to)186-189
Number of pages4
JournalMaterials Letters
Volume195
DOIs
Publication statusPublished - 15 May 2017

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Reactive sputtering
Silicon
Solar cells
solar cells
sputtering
Thin films
silicon
Substrates
thin films
cells
Growth temperature
Open circuit voltage
open circuit voltage
high current
absorbers
radio frequencies
Electric properties
Energy gap
Optical properties
Earth (planet)

Cite this

Gao, Chunhui ; Xu, Ming ; Ng, Boon K. ; Kang, Liangliang ; Jiang, Liangxing ; Lai, Yanqing ; Liu, Fangyang. / In situ growth of Sb2S3 thin films by reactive sputtering on n-Si(100) substrates for top sub-cell of silicon based tandem solar cells. In: Materials Letters. 2017 ; Vol. 195. pp. 186-189.
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abstract = "Si-based tandem solar cells have emerged as a promising alternative to replace the current high efficiency silicon single junction solar cells. Sb2S3 is a promising candidates for top cell absorbers due to its suitable band gap, non-toxic and earth-abundant constituent, simple composition, and long term stability. Here, in situ growth of Sb2S3 thin films by radio frequency (RF) reactive sputtering on n-Si(100) substrates is reported. The effects of the growth temperature on morphology, structure, optical and electrical properties of the films were evaluated. The top sub-cell device shows an open circuit voltage (Voc) of 367 mV, indicating the potential to be the top cell of the next generation Si-based tandem solar cells.",
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In situ growth of Sb2S3 thin films by reactive sputtering on n-Si(100) substrates for top sub-cell of silicon based tandem solar cells. / Gao, Chunhui; Xu, Ming; Ng, Boon K.; Kang, Liangliang; Jiang, Liangxing; Lai, Yanqing; Liu, Fangyang.

In: Materials Letters, Vol. 195, 15.05.2017, p. 186-189.

Research output: Contribution to journalArticle

TY - JOUR

T1 - In situ growth of Sb2S3 thin films by reactive sputtering on n-Si(100) substrates for top sub-cell of silicon based tandem solar cells

AU - Gao, Chunhui

AU - Xu, Ming

AU - Ng, Boon K.

AU - Kang, Liangliang

AU - Jiang, Liangxing

AU - Lai, Yanqing

AU - Liu, Fangyang

PY - 2017/5/15

Y1 - 2017/5/15

N2 - Si-based tandem solar cells have emerged as a promising alternative to replace the current high efficiency silicon single junction solar cells. Sb2S3 is a promising candidates for top cell absorbers due to its suitable band gap, non-toxic and earth-abundant constituent, simple composition, and long term stability. Here, in situ growth of Sb2S3 thin films by radio frequency (RF) reactive sputtering on n-Si(100) substrates is reported. The effects of the growth temperature on morphology, structure, optical and electrical properties of the films were evaluated. The top sub-cell device shows an open circuit voltage (Voc) of 367 mV, indicating the potential to be the top cell of the next generation Si-based tandem solar cells.

AB - Si-based tandem solar cells have emerged as a promising alternative to replace the current high efficiency silicon single junction solar cells. Sb2S3 is a promising candidates for top cell absorbers due to its suitable band gap, non-toxic and earth-abundant constituent, simple composition, and long term stability. Here, in situ growth of Sb2S3 thin films by radio frequency (RF) reactive sputtering on n-Si(100) substrates is reported. The effects of the growth temperature on morphology, structure, optical and electrical properties of the films were evaluated. The top sub-cell device shows an open circuit voltage (Voc) of 367 mV, indicating the potential to be the top cell of the next generation Si-based tandem solar cells.

KW - In situ growth

KW - Reactive sputtering

KW - Sb S thin films

KW - Top sub-cells

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UR - http://www.mendeley.com/research/situ-growth-sb2s3-thin-films-reactive-sputtering-nsi100-substrates-top-subcell-silicon-based-tandem

U2 - 10.1016/j.matlet.2017.02.046

DO - 10.1016/j.matlet.2017.02.046

M3 - Article

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SP - 186

EP - 189

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

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