In situ growth of Sb2S3 thin films by reactive sputtering on n-Si(100) substrates for top sub-cell of silicon based tandem solar cells

Chunhui Gao, Ming Xu, Boon K. Ng, Liangliang Kang, Liangxing Jiang, Yanqing Lai, Fangyang Liu

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Si-based tandem solar cells have emerged as a promising alternative to replace the current high efficiency silicon single junction solar cells. Sb2S3 is a promising candidates for top cell absorbers due to its suitable band gap, non-toxic and earth-abundant constituent, simple composition, and long term stability. Here, in situ growth of Sb2S3 thin films by radio frequency (RF) reactive sputtering on n-Si(100) substrates is reported. The effects of the growth temperature on morphology, structure, optical and electrical properties of the films were evaluated. The top sub-cell device shows an open circuit voltage (Voc) of 367 mV, indicating the potential to be the top cell of the next generation Si-based tandem solar cells.
Original languageEnglish
Pages (from-to)186-189
Number of pages4
JournalMaterials Letters
Volume195
DOIs
Publication statusPublished - 15 May 2017

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