Recombination noise in semiconductor junction devices

Paul Edwards

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    The evolution of conceptual models of recombination noise generation in bipolar
    semiconductor junctions is explored with particular reference to recent developments in nonclassical light generation. This development is traced from the early work pioneered by van der Ziel
    through to recent work on sub-Poissonian light generation initiated by Yamamoto. This recent
    work has emphasised the importance of the driving impedance in suppressing recombination noise.
    It has helped to resolve several longstanding ambiguities and misunderstandings concerning the
    fundamentals of shot noise generation in laser diodes and light-emitting diodes, as well as in bipolar
    junction diodes and transistors, and allows a common conceptual approach to shot noise
    generation and propagation in photonic and electronic devices. Surprisingly, it also lends support
    to early suggestions by van der Ziel, subsequently regarded as erroneous by Buckingham and
    Faulkner, that bipolar junction shot noise does in fact originate in the transport of minority carriers
    across the depletion region of macroscopic junctions, although only in the limit of low injection.
    Original languageEnglish
    Pages (from-to)176-183
    Number of pages8
    JournalIEE Proceedings - Circuits, Devices and Systems
    Issue number2
    Publication statusPublished - 2004


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